General presentation of the INS2 station

The new INS2 (since 2016)  is dedicated to in situ studies of the growth and structure of nanometric films, particles, nanowires or new 2D material, possibly operando and in real time, using diffusion/diffraction of hard X-rays. The growth is achieved using a combination of techniques including molecular beam epitaxy (MBE) and chemical vapor deposition (CVD). X-ray measurements allow, among other things, structural studies on the atomic scale by grazing incidence scattering at large angles (GIXS/GIXD/SXRD/XRR) and morphological studies on the scale of a few nanometers or tens of nanometers, by scattering at small angles in grazing incidence (GISAXS). The GIXS and GISAXS techniques can be used simultaneously in real time.