Magnets:

  • Up to 2500 Gauss
  • Polar configuration (magnetization perpendicular to the sample surface and contained in the incidence plane)
  • Longitudinal configuration (magnetization kept in the sample surface and contained in the incidence plane)
  • Transversal configuration (magnetization kept in the sample surface and perpendicular to the incidence plane)
  • KERR configuration
  • Reflectivity configuration

Laser:

  • Wavelength 670 nm

Sample holder:

  • Heater up to 1500K (e-bombardment for fast heating; electric heater for high gas pressure; direct current for semiconductor substrates)
  • LHe criostat (10K)
  • Azimuthal rotation

Ultra-high vacuum:

  • Base UHV = 2x10-9 mbar
  • Gas line with precise leak valve
  • Thermal gas cracker (maximum pressure 1x10-4mbar)
  • Ion bombardment gun
  • Molecular Beam Epitaxy evaporators
  • Organic Material Effusion cell

Extra in-situ characterization:

  • Sample holder and UHV load-lock compatible with PLD, XPS/LEED and HAXPES set-ups

 

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