Laser:

  • Pulsed neodymium-doped yttrium-aluminium-garnet (Nd:YAG) Quantel 981C
  • Principal wavelength 1064 nm with a maximum pulse energy of 1200 mJ
  • First harmonic wavelength 532 nm with a maximum pulse energy of 600 mJ
  • Second harmonic wavelength 355 nm with a maximum pulse energy of 280 mJ
  • Maximum repetition rate of 10 Hz
  • Pulse width of 8 ns

Sample holder:

  • Heater up to 1500K (e-bombardment for fast heating; electric heater for high gas pressure; direct current for semiconductor substrates)
  • Azimuthal rotation with 0.01 angular resolution
  • Variable sample-target distance
  • Variable height position respect to the plume center

Target holder:

  • Carrousel with 6 target holders
  • Two translation stages to raster the target respect to the laser (fixed laser to substrate position)

Ultra-high vacuum:

  • Base UHV = 3x10-10 mbar
  • O2 gas line with precise leak valve
  • Second free gas line with precise leak valve
  • Thermal gas cracker (maximum pressure 1x10-4mbar)

In-situ characterization:

  • High energy RHEED up to 30 keV (maximum pressure 1x10-3 mbar)
  • Sample holder and UHV load-lock compatible with MOKE, XPS/LEED and HAXPES set-ups

Annealing:

  • Coupled oven for sample annealing up to 1300 K under 1 bar of gas (typically O2)

 

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